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Renewable Energy 2012

6th - 9th Jun, 2012
BITEC
Bangkok, Thailand

30th Anniversary 1982 - 2012

30th-anni-final-30th-background-and-words-01

Committed to Service

Metrology Solutions

 

Automatic and manual semiconductor process control

  • Automatic wafer load / unload
  • 6" and 8" wafers, 12" on request
  • Auto wafer alignment
  • Semi-automatic measurement sequence:
    • Start up to 25 wafer measurement in a single operation
    • Pattern dimensions (Bump width / length / height, photoresist aperture size)
    • Step height, and trasparent film thickness
    • Bump roughness
 

The non destructive solution for Deep high aspect ratio via and trench depth measurement.

Deeprobe reduces the number of X-SEM inspection required, allowing for non destructive TSV and tench depth assessment. Deeprobe uses IR interferometric sensor for cavity depth measurement. Deeprobe is the perfect tool for Deep reactive ion etching process control.

Qualified and certified by IMEC

 

The most cost effective and non destructive solution for MEMS micromachining process control.

MEMSCAN uses patented optical device which combines low coherence Infra Red interferometric technique and infra red vision. MEMSCAN provides membrane thickness and uniformity mapping (Silicon, Pyrex, glass,....), Airgap measurement and through silicon cap (Wafer level packaging) membrane thickness and shape. Visual defects can also be detected in hidden time while performing the measurement sequence. Inspection and metrology are performed in one shot with one tool. MEMSCAN substrate holders were specially designed to handle wafers processed on both sides.

 

Optical profiler for accurate and repeatable 3D metrology

  • Sub-nanometer vertical resolution (down to 0.1 nm) at all magnifications
  • Non-contact measurements allowing accurate and repeatable results
  • Manual stitching / Manual turret
  • Easy to use
  • Sub-nanometric roughness measurements
  • Compact
 

High precision metrology for Semiconductor, MEMS, optical and other related industries.

Specially designed for the semiconductor applications, the T-MAP is equipped with one or two IR sensors to measures wafer geometry parameters such as thickness, TTV, shape and flatness. Capable of handling 2 inches to 300 mm wafers, T-MAP provides highly accurate and repeatable measurements on mono and multilayer substrates for all kind of materials. The whole system and especially the human-machine interface software were designed to enable the easiest and fastest measurement for the user. The optional microscopy capability is the perfect solution to perform the metrology on defined patterns of product wafers.

Microscopy capability and pattern recognition for measurement on areas defined by customer
IR microscopy capability to detect post bonding defects for multi layer substrates
The perfect solution for wafer on temporary carrier thinning process control
Inspection and metrology for die stacking